052-6320 rev b 6 - 2009 product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode - motor controllers - converters ? snubber diode ? uninterruptible power supply ? induction heating ? high speed recti ers maximum ratings all ratings per diode: t c = 25c unless otherwise speci ed. microsemi website - http://www.microsemi.com symbol characteristic / test conditions ratings unit v r maximum d.c. reverse voltage 600 volts v rrm maximum peak repetitive reverse voltage v rwm maximum working peak reverse voltage i f(av) maximum average forward current (t c = 40c, duty cycle = 0.5) 150 amps i f(rms) rms forward currrent (square wave, 50% duty) 165 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 1000 t j , t stg operating and storage junction temperature range -55 to 175 c symbol characteristic / test conditions min typ max unit v f forward voltage i f = 150a 1.25 1.6 volts i f = 300a 2.0 i f = 150a, t j = 125c 1.25 i rm maximum reverse leakage current v r = 600v 25 a v r = 600v, t j = 125c 250 c t junction capacitance, v r = 200v 139 pf static electrical characteristics 1 continuous current limited by package lead temperature. sot-227 1 2 3 4 isotop "ul recongnized" file # 145592 product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times (t rr ) ? soft recoverery characteristics ? low forward voltage ? low forward voltage ? high blocking voltage ? low leakage current ultrafast soft recovery dual recti er diode APT2X151DL60J APT2X151DL60J apt2x150dl60j 600v 150a anti-parallel parallel 2 1 3 23 4 14 apt2x150dl60j
apt2x151_150dl60j dynamic characteristics 052-6320 rev b 6 - 2009 thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speci cations and information contained herein. symbol characteristic / test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -15a/ s, v r = 30v, t j = 25c 51 ns t rr reverse recovery time i f = 150a, di f /dt = -200a/ s v r = 400v, t c = 25c 408 q rr reverse recovery charge 2387 nc i rrm maximum reverse recovery current 13 amps t rr reverse recovery time i f = 150a, di f /dt = -200a/ s v r = 400v, t c = 125c 639 ns q rr reverse recovery charge 7253 nc i rrm maximum reverse recovery current 21 amps t rr reverse recovery time i f = 150a, di f /dt = -1000a/ s v r = 400v, t c = 125c 299 ns q rr reverse recovery charge 12075 nc i rrm maximum reverse recovery current 68 amps symbol characteristic / test conditions min typ max unit r jc junction-to-case thermal resistance 0.56 c/w v isolation rms voltage (50-60mhz sinusoidal waveform from terminals to mounting base for 1 min.) 2500 w t package weight 1.03 oz 29.2 g torque maximum mounting torque 10 lbin 1.1 nm 0 0.1 0.2 0.3 0.4 0.5 0.6 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: z jc , thermal impedance (?/w)
052-6320 rev b 6 - 2009 apt2x151_150dl60j typical performance curves 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 0 2000 4000 6000 8000 10000 12000 14000 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 0 50 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 i rrm q rr t rr 150a 75a 150a 75a t j = 55c t j = 150c v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) t j = 25c t j = 125c -di f /dt, current rate of change (a/ s ) figure 3, reverse recovery time vs. current rate of change t rr , collector current (a) q rr , reverse recovery charge (nc) t j , junction temperature (c) figure 6, dynamic parameters vs junction temperature k f , dynamic parameters (normalized to 1000a/ s) i rrm , reverse recovery current (a) case temperature (c) figure 7, maximum average forward current vs. case temperature i f(av) (a) 0 200 400 600 800 1000 1200 1400 1 10 100 500 v r , reverse voltage (v) figure 8, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = 125c v r = 400v t j = 125c v r = 400v -di f /dt, current rate of change (a/ s ) figure 4, reverse recovery charge vs. current rate of change -di f /dt, current rate of change (a/ s ) figure 5, reverse recovery current vs. current rate of change t j = 125c v r = 400v 150a 75a 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 175
apt2x151_150dl60j 052-6320 rev b 6 - 2009 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm current transformer di f /dt adjust d.u.t. +18v 0v t rr / q rr waveform slope = di m / dt 6 di m /dt - maximum rate of current increase during the trailing portion of t rr. 6 v r microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. sot-227 (isotop ? ) package outline anode 1 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 h100 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) anode 2 anti-parallel parallel cathode 1 r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) cathode 2 anode 1 cathode 2 anode 2 cathode 1 apt2x100d60j apt2x101d60j
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